PART |
Description |
Maker |
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A) Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.18ohm,身份证\u003d 9.8A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRF9630 IRF9630PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP 4.7PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ
|
IRF[International Rectifier]
|
IRFD9220 |
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-0.56A) Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A) -200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
IRF[International Rectifier]
|
232219314159 PR01-3R9 PR02-330K PR01-1R PR01-22K P |
WIDERSTAND LEISTUNG METALL 15R 200V 1W WIDERSTAND LEISTUNG METALL 3R9 200V 1W WIDERSTAND LEISTUNG METALL 22K 200V 1W WIDERSTAND LEISTUNG METALL 5R6 200V 1W WIDERSTAND LEISTUNG METALL 4R7 200V 1W WIDERSTAND LEISTUNG METALL 330R 200V 1W WIDERSTAND LEISTUNG METALL 6R8 200V 1W WIDERSTAND LEISTUNG METALL 22K 500V 2W WIDERSTAND LEISTUNG METALL 470K 500V 2W WIDERSTAND LEISTUNG METALL 220R 500V 2W WIDERSTAND LEISTUNG METALL 1K5 500V 2W WIDERSTAND LEISTUNG METALL 6R8 500V 2W WIDERSTAND LEISTUNG METALL 100K 500V 2W WIDERSTAND LEISTUNG METALL 18K 200V 1W WIDERSTAND LEISTUNG METALL 100R 500V 2W WIDERSTAND LEISTUNG METALL 220K 500V 2W WIDERSTAND LEISTUNG METALL 3R3 500V 2W WIDERSTAND LEISTUNG METALL 4R7 500V 2W WIDERSTAND LEISTUNG METALL 5K6 200V 1W WIDERSTAND LEISTUNG METALL 4K7 500V 2W WIDERSTAND LEISTUNG METALL 3K3 500V 2W WIDERSTAND LEISTUNG METALL 68R 200V 1W WIDERSTAND LEISTUNG METALL 1M 500V 2W WIDERSTAND LEISTUNG METALL 6K8 500V 2W WIDERSTAND LEISTUNG METALL 1K 500V 2W WIDERSTAND给付000 500V 2W的金 WIDERSTAND LEISTUNG METALL 1R 200V 1W WIDERSTAND给付1W的金受体200 WIDERSTAND LEISTUNG METALL 150K 200V 1W WIDERSTAND给付1500W的金 WIDERSTAND LEISTUNG METALL 330K 500V 2W WIDERSTAND给付3300V 2W的金 WIDERSTAND LEISTUNG METALL 3K3 200V 1W WIDERSTAND给付1W的金3K3 200 WIDERSTAND LEISTUNG METALL 18R 200V 1W WIDERSTAND给付1W的金18受体200 WIDERSTAND LEISTUNG METALL 100R 200V 1W WIDERSTAND给付1W的金100R 200 WIDERSTAND LEISTUNG METALL 15K 500V 2W WIDERSTAND给付15000 500V 2W的金 WIDERSTAND LEISTUNG METALL 15R 500V 2W WIDERSTAND给付金属15R 500V 2W WIDERSTAND LEISTUNG METALL 3K9 200V 1W WIDERSTAND给付1W的金K9 200 WIDERSTAND LEISTUNG METALL 470R 500V 2W WIDERSTAND给付金属470R 500V 2W WIDERSTAND LEISTUNG METALL 15K 200V 1W
|
Vishay Intertechnology, Inc. CommScope, Inc. Applied Micro Circuits, Corp. MicroEngineering Labs, Inc. Welwyn Components, Ltd. EAO International STMicroelectronics N.V.
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola) 飞思卡尔半导体(中国)有限公司
|
IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF9240 IRF9240-15 |
Simple Drive Requirements TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A) HEXFET?TRANSISTORS 200V, P-CHANNEL 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
STY100NS20FD 7739 |
N-CHANNEL Power MOSFET N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET From old datasheet system N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|